WCSE

Estimation of Thermal Destruction of AuGeNi Ohmic Contacts of Resonant Tunneling Diodes on the Basis of Nanoscale AlAs/GaAs Heterostructures

Abstract— In the present work the thermal destruction of AuGeNi ohmic contacts of resonant tunneling diodes using artificial aging was researched. The functional dependence of contact resistance of AuGeNi ohmic contacts of resonant tunneling diodes on time and temperature was put forward. This dependence is valid in case the temperatures are lower than 300 ºC, it was determined for two parties of resonant tunneling diodes. Obtained results can be used for reliability prediction of resonant tunneling diodes and radio-electronic devices on its basis.

Index Terms— Resonant tunneling diode, AuGeNi ohmic contacts, destruction, thermal impact, degradation processes, contact resistance, nonlinear radiosignal transmitters.

Mstislav O. Makeev, Yury A. Ivanov, Sergey A. Meshkov, Vladimir Y. Sinyakin, Anton I. Ivanov
Bauman Moscow State Technical University, RUSSIA

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Cite: Mstislav O. Makeev, Yury A. Ivanov, Sergey A. Meshkov, Vladimir Y. Sinyakin, Anton I. Ivanov, "Estimation of Thermal Destruction of AuGeNi Ohmic Contacts of Resonant Tunneling Diodes on the Basis of Nanoscale AlAs/GaAs Heterostructures," 2015 The 5th International Workshop on Computer Science and Engineering-Information Processing and Control Engineering (WCSE 2015-IPCE), pp. 260-265, Moscow, Russia, April 15-17, 2015.